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ver. 5 2007 - 2 - 23 NJG1127HB6 - 1 - 800mhz band lna gaas mmic n general description n package outline njg11 27hb6 is a lna ic designed for 800m hz band c dma 2000 cellular phone . this ic has the function which by passes lna, and high gain mode or low gain mode can be chosen. h igh i ip3 and a low noise are achieved at the high gain mode . a nd low current consumption can be achieved at the low gain mode because lna enters the state of the standby. a small and thin package of usb8 is adopted . n features l low voltage operation +2. 8 v typ. l low control voltage operat ion +1.85v typ. [ lna high g ain m ode] l high input ip3 +11 db m typ. @ f= 88 0mhz l low noise figure 1. 4 db typ. @ f= 88 0mhz [ lna low g ain m ode] l low current consumption 15ua typ. l high input ip3 +19 db m t yp. @ f= 88 0mhz l s mall & thin package usb8 - b 6 (package size: 1.5 mm x1.5 mm x 0. 5 5mm typ. ) n pin configuration note: s pecifications and description listed in this catalog are subject to change without prior notice. njg1127 hb 6 pin connection 1.v inv 2.gnd 3.rf out 4.gnd 5.rf in 6.gnd 7. v ctl 8. gnd 1 pin index (top view) bias circuit lna circuits bypass circuit logic circuit 1 3 5 8 7 6 2 4
NJG1127HB6 - 2 - n absolut e maximum ratings ( t a = + 25 c , z s =z l =50 w ) parameters symbol conditions ratings units supply voltage v dd 5 .0 v inverter supply voltage v inv 5 .0 v control voltage v ctl 5.0 v input power p in +15 dbm power dissipation p d o n pcb board, tjmax=150 c 160 mw operating temperature t opr - 4 0 ~+ 85 c storage temperature t stg - 55~+ 1 50 c n electrical character istics 1 (dc charact eristics) (general conditions: v dd = v inv =2.8v, t a =+25 c, z s =z l =50 w ) parameters symbol conditions min typ max units operating volta ge v dd 2.65 2.80 2.95 v inverter supply voltage v inv 2.65 2.80 2.95 v control voltage (high) v ctl (h) 1.80 1.85 v dd+ 0.3 v control voltage (low) v ctl (l) 0 0 0.3 v operating current1 (lna high gain mode) i dd 1 rf off, v ctl =1.85v - 10.0 16.0 m a operati ng current2 (lna low gain mode) i dd 2 rfoff, v ctl =0v - 1 5 ua inverter current1 (lna high gain mode) i inv 1 rf off, v ctl =1.85v - 150 240 u a inverter current2 (lna low gain mode) i inv 2 rf off, v ctl =0v - 15 40 u a control current i ctl rf off, v ctl =1.85v - 5 15 u a
NJG1127HB6 - 3 - n electrical character istics 2 (lna h igh gain mode ) (general conditions: v dd = v inv =2.8v, v ctl =1.85v, f rf = 880mhz, t a =+25 c, z s =z l =50 w ) parameters symbol conditions min typ max units small signal gain1 gain 1 1 3.5 1 5. 0 17.0 db noise figure1 nf1 exclude pcb & connector losses (in: 0.04db) - 1.4 1.8 db 1db gain compression output power1 p - 1db_1 +4 +9 - dbm 3rd order input intercept point1 iip3_1 f1=f rf , f2=f rf +100khz, p in = - 25dbm +8 +11 - dbm rf in vswr1 vswr i _ 1 - 1.5 2.0 rf out vswr1 vswr o _ 1 - 1.5 2.0 n electrical character istics 2 (lna l ow gain mode ) (general conditions: v dd = v inv =2.8v, v ctl =0v, f rf = 880mhz, t a =+25 c, z s =z l =50 w ) parameters symbol conditions min typ max units small signal gain2 gain 2 - 4.0 - 2. 5 0 db noise figure2 nf2 exclude pcb & connector losses (in: 0.04db) - 2.5 5.0 db 1db gain compression output power2 p - 1db_2 +1 +8 - dbm 3rd order input intercept point2 iip3_2 f1=f rf , f2=f rf +100khz, p in = - 12dbm +15 +19 - dbm rf in vswr2 vswr i _ 2 - 2. 3 2.7 rf out vswr2 vswr o _ 2 - 1.8 2.1
NJG1127HB6 - 4 - n terminal infomation caution 1) ground terminal (no.2, 4, 6, 8) should be connected to the ground plane as close as possible for excellent rf performance, because distance to gnd makes parasitic inductance. n truth table ? h ? =v ctl (h), ? l ? =v ctl (l) v ctl gain mode lna l low bypass h high pass no. symbol description 1 vinv supply voltage terminal for internal logic circuit (inverter). please place a bypass capacitor between this and gnd for avoiding rf noise from outside. 2 gnd g round terminal. 3 rfout rf signal comes out from this terminal, and goes through an external matching circuit connected to this. inductor l3 as shown in the application circuit is a part of an external matching circuit, and also provide dc power to lna. capacitor c2 as shown in the application circuit is a bypass capacitor. 4 gnd ground terminal. 5 rfin rf input terminal. the rf signal is input through external matching circuit connected to this terminal. a dc blocking capacitor is not required. 6 gnd ground terminal. 7 vctl control port. a logic control signal is required to select high or low gain mode of lna. this terminal is set to more than +1.5v of logical high level for high gain mode of lna, and set to 0~+0.3v of logical low level for low gai n mode. 8 gnd ground terminal.
NJG1127HB6 - 5 - n electrical characteristics (lna high gain mode) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =1.85v, zs=zl=50 w ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 750 800 850 900 950 1000 10 11 12 13 14 15 16 17 18 gain (db) frequency (mhz) nf (db) gain nf, gain vs. frequency nf (f=750~1000mhz) -80 -60 -40 -20 0 20 40 -30 -20 -10 0 10 20 pout, im3 (dbm) pin (dbm) iip3=+10.4dbm pout pout, im3 vs. pin im3 oip3=+25.7dbm (f1=880mhz, f2=f1+100khz) -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 pout vs. pin pout (dbm) pin (dbm) p-1dbout=+9.2bm gain 1db compression line pout p-1dbin=-5.0dbm (f=880mhz) 0 5 10 15 20 -40 -30 -20 -10 0 10 8 10 12 14 16 i dd (ma) pin (dbm) gain (db) gain gain, i dd vs. pin i dd p-1dbin=-5.0dbm (f=880mhz) 22 23 24 25 26 27 28 29 30 860 870 880 890 900 910 9 10 11 12 13 14 15 16 17 oip3 (dbm) frequency (mhz) iip3 (dbm) oip3 oip3, iip3 vs. frequency iip3 (f1=860~910mhz, f2=f1+100khz, pin=-25dbm)
NJG1127HB6 - 6 - n electrical characteris tics (lna high gain mode) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =1.85v, zs=zl=50 w )
NJG1127HB6 - 7 - n electrical characteristics (lna high gain mode) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =1.85v, zs=zl =50 w ) 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 2.4 2.6 2.8 3.0 3.2 3.4 3.6 p-1db(out) (dbm) v dd , v inv (v) p-1db(out) vs. v dd , v inv p-1db(out) (f=880mhz) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.4 2.6 2.8 3.0 3.2 3.4 3.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 vswri v dd , v inv (v) vswro vswri vswri, vswro vs. v dd , v inv vswro (f=880mhz) 14 16 18 20 22 24 26 28 30 2.4 2.6 2.8 3.0 3.2 3.4 3.6 4 6 8 10 12 14 16 18 20 oip3 (dbm) v dd , v inv (v) iip3 (dbm) oip3 oip3, iip3 vs. v dd , v inv iip3 (f1=880mhz, f2=f1+100khz, pin=-25dbm) 11 12 13 14 15 16 17 18 19 2.4 2.6 2.8 3.0 3.2 3.4 3.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gain (db) v dd , v inv (v) nf (db) gain gain, nf vs. v dd , v inv nf (f=880mhz) 6 7 8 9 10 11 12 13 14 2.4 2.6 2.8 3.0 3.2 3.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i dd (ma) v dd , v inv (v) i inv (ma) i dd i dd , i inv vs. v dd , v inv i inv (rf off)
NJG1127HB6 - 8 - n electrical characteristics (lna high gain mode) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =1.85v, zs=zl=50 w ) 10 11 12 13 14 15 16 17 18 -40 -20 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gain (db) temperature ( o c) nf (db) gain gain, nf vs. temperature nf (f=880mhz) 0 2 4 6 8 10 12 14 -40 -20 0 20 40 60 80 100 temperature ( o c) p-1db(out) (dbm) p-1db(out) vs. temperature p-1db(out) (f=880mhz) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -40 -20 0 20 40 60 80 100 temperature ( o c) vswri, vswro vswri, vswro vs. temperature vswri vswro (f=880mhz) 23 24 25 26 27 28 29 -40 -20 0 20 40 60 80 100 6 7 8 9 10 11 12 oip3 (dbm) temperature ( o c) iip3 (dbm) oip3 oip3, iip3 vs. temperature iip3 (f1=880mhz, f2=f1+100khz, pin=-25dbm) 0 2 4 6 8 10 12 14 -40 -20 0 20 40 60 80 100 temperature ( o c) i dd (ma) i dd vs. temperature i dd (rf off) 0 5 10 15 20 0 5 10 15 20 frequency (ghz) k-factor k-factor vs. temperature -40 o c -30 o c -10 o c 0 o c +25 o c +40 o c +85 o c (f=100mhz~20ghz)
NJG1127HB6 - 9 - n electrical characteristics ( lna low gain mode) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =0v, zs=zl=50 w ) -50 -40 -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 20 pout vs. pin pout (dbm) pin (dbm) p-1dbin=+11.5dbm gain 1db compression line pout p-1dbout=+7.8dbm (f=880mhz) -9 -8 -7 -6 -5 -4 -3 -2 -1 -40 -30 -20 -10 0 10 20 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 i dd (ua) pin (dbm) gain (db) gain gain, i dd vs. pin i dd p-1dbin=+10.8dbm (f=880mhz) -100 -80 -60 -40 -20 0 20 -30 -20 -10 0 10 20 30 pout, im3 (dbm) pin (dbm) iip3=+23.5dbm pout pout, im3 vs. pin im3 oip3=+20.5dbm (f1=880mhz, f2=f1+100khz) 18 20 22 24 26 28 30 860 870 880 890 900 910 18 20 22 24 26 28 30 oip3 (dbm) frequency (mhz) iip3 (dbm) oip3 oip3, iip3 vs. frequency iip3 (f1=860~910mhz, f2=f1+100khz, pin=-12dbm) 0 1 2 3 4 5 6 7 8 750 800 850 900 950 1000 -7 -6 -5 -4 -3 -2 -1 0 1 gain (db) frequency (mhz) nf (db) gain nf, gain vs. frequency nf (f=750~1000mhz)
NJG1127HB6 - 10 - n electrical characteristics (lna low gain mode) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =0v, zs=zl=50 w )
NJG1127HB6 - 11 - n electrical characteristics (lna low gain mode) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =0v, zs=zl=50 w ) 6 7 8 9 10 11 2.4 2.6 2.8 3.0 3.2 3.4 3.6 p-1db(out) (dbm) v dd , v inv (v) p-1db(out) vs. v dd , v inv p-1db(out) (f=880mhz) 0.00 0.05 0.10 0.15 0.20 2.4 2.6 2.8 3.0 3.2 3.4 0 5 10 15 20 i dd (ua) v dd , v inv (v) i inv (ua) i dd i dd , i inv vs. v dd , v inv i inv (rf off) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.4 2.6 2.8 3.0 3.2 3.4 3.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 vswri v dd , v inv (v) vswro vswri vswri, vswro vs. v dd , v inv vswro (f=880mhz) 20 22 24 26 28 30 32 34 36 2.4 2.6 2.8 3.0 3.2 3.4 14 16 18 20 22 24 26 28 30 oip3 (dbm) v dd , v inv (v) iip3 (dbm) oip3 oip3, iip3 vs. v dd , v inv iip3 (f1=880mhz, f2=f1+100khz, pin=-12dbm) -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 2.4 2.6 2.8 3.0 3.2 3.4 3.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gain (db) v dd , v inv (v) nf (db) gain gain, nf vs. v dd , v inv nf (f=880mhz)
NJG1127HB6 - 12 - n electrical characteristics (lna low gain mod e) (general conditions: ta=+25 c , v dd =v inv =2.8v, v ctl =0v, zs=zl=50 w ) -8 -7 -6 -5 -4 -3 -2 -1 0 -40 -20 0 20 40 60 80 100 2 3 4 5 6 7 8 9 10 gain (db) temperature ( o c) nf (db) gain gain, nf vs. temperature nf (f=880mhz) 14 16 18 20 22 24 26 28 -40 -20 0 20 40 60 80 100 14 16 18 20 22 24 26 28 oip3 (dbm) temperature ( o c) iip3 (dbm) oip3 oip3, iip3 vs. temperature iip3 (f1=880mhz, f2=f1+100khz, pin=-12dbm) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -40 -20 0 20 40 60 80 100 temperature ( o c) vswri, vswro vswri, vswro vs. temperature vswri vswro (f=880mhz) 0 2 4 6 8 10 -40 -20 0 20 40 60 80 100 temperature ( o c) i dd (ua) i dd vs. temperature i dd (rf off) 0 5 10 15 20 0 5 10 15 20 frequency (ghz) k-factor k-factor vs. temperature -40 o c -30 o c -10 o c 0 o c +25 o c +40 o c +85 o c (f=100mhz~20ghz) 0 2 4 6 8 10 12 14 -40 -20 0 20 40 60 80 100 temperature ( o c) p-1db(out) (dbm) p-1db(out) vs. temperature p-1db(out) (f=880mhz)
NJG1127HB6 - 13 - n application circuit n test pcb layout parts id notes l1~l4 taiyo - yuden (hk1005 series ) c1,c2 murat a (grm15 series ) rfin rfout bias circuit logic circuit 1 3 5 8 7 6 2 4 l1 39nh l2 12nh l3 12nh l4 12nh c1 1000pf c2 1000pf v dd =2.8v v ctl =0v or 1.85v v inv =2.8v (top view) 1 pin index rf in rf out v dd v ctl v inv l1 l2 l4 l3 c1 c2 (top view) pcb (fr - 4) : t=0.2mm microstrip line width =0.4mm (z 0 =50 w ) pcb size=17.0mm x 17.0mm parts list
NJG1127HB6 - 14 - 0 . 0 3 8 0 . 0 1 1 p i n i n d e x 0 . 4 0 . 1 ( t o p v i e w ) ( s i d e v i e w ) 1 . 5 0 . 0 5 0 . 2 0 . 0 5 0 . 2 0 . 0 5 0 . 3 0 . 1 0 . 2 0 . 1 0 . 2 0 . 1 0 . 5 0 . 1 0 . 5 0 . 1 1 . 5 0 . 0 5 r 0 . 0 7 5 7 6 5 1 2 3 8 4 0 . 1 4 0 . 0 5 ( b o t t o m v i e w ) 0 . 3 0 . 0 5 0 . 5 5 0 . 0 5 n package outline ( usb8 - b 6) terminal treat :au pcb :fr5 molding material :epoxy resin unit :mm weight :4mg caution s on using this product this product contains gallium - arsenide (gaas) which is a harmful material. do not eat or put in to mouth. do not dispose i n fire or break up this product. do not chemically make gas or powder with this product . to wast e th is product, please obey the relati ng law of your country. this product may be damaged with electric static discharge (esd) or spike voltage. p lease hand le with care to avoid these damages . [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

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